Double-decker silsesquioxane-containing oligomers for sub-10 nm scale fabricating materials

Abstract

Two series of DDSQ (double-decker silsesquioxane)-containing oligomers were synthesized and their self-aggregation behaviors were investigated. Result shows that DDSQ-(C18-2A) could form well-organized lamellar structure with a d-spacing 8.2 nm. Considering the demand of microelectronic industry, this branched alkylated DDSQ may serve as an excellent candidate for the next generation fabricating materials.