Transistor sizing of cmos vlsi circuits in deep submicron technology

Abstract

In Very-huge scale reconciliation (VLSI) application zone, postponement and power are the significant variables for any advanced circuits. Its observed that the as CMOS Inverter Transistor Size decreases from 1µm to 120nm, power reduced from 3.331 to 2.644 (µW) and delay reduced from 5.026 to 22.66 (pS). It is observed that the table 4 as 28T Full Adder Circuit Voltage Scale decreases from 5 V to 1 V, Total power reduced from 63150 to 2262 (nW) and delay reduced from 39.93 to 38.52 (nS) in 180nm technology. It is observed that the table 6 as 28T Full Adder Circuit Voltage Scale decreases from 2 V to 0.8 V, Total power reduced from 21.39 to 2.916 (µW) and delay reduced from 4.939 to 4.74 (nS) in 90nm technology. It is observed that the table 8 as 28T Full Adder Circuit Voltage Scale decreases from 1.5 V to 0.7 V, Total power reduced from 8.98 to 1.713 (µW) and delay reduced from 4.963 to 4.581 (nS) in 45nm technology.