We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step.
CITATION STYLE
van Sebille, M., Allebrandi, J., Quik, J., van Swaaij, R. A. C. M. M., Tichelaar, F. D., & Zeman, M. (2016). Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances. Nanoscale Research Letters, 11(1). https://doi.org/10.1186/s11671-016-1567-6
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