In this paper, a novel and easy technique is proposed for orientation controlled growth of MWNTs. The results indicate that when CNT growth was carried over the substrate, not treated with plasma, horizontal network of MWNTs was formed. Plasma treatment to the substrate prior to CNTs growth led to formation of vertically aligned MWNTs. An in situ growth as a function of plasma treatment time reveals the mechanism behind this flip process. All experiments were performed under atmospheric pressure. At every step during time-dependent growth process, CNTs were characterized using FESEM, HRTEM, and Raman spectroscopy. Iron sputtered silicon substrate was also investigated to validate the excellent formation of as-grown vertical CNTs and also to analyze the role of oxygen plasma behind the orientation-controlled growth. The as-grown CNTs over the iron sputtered silicon substrate with or without plasma treatment were characterized by FESEM and AFM. The successful orientation-controlled growth of CNTs was achieved.
CITATION STYLE
Tripathi, N., & Islam, S. S. (2017). A new approach for orientation-controlled growth of CNTs: an in-depth analysis on the role of oxygen plasma treatment to catalyst. Applied Nanoscience (Switzerland), 7(3–4), 125–129. https://doi.org/10.1007/s13204-017-0549-z
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