Effect of the Microstructure of ZnO Thin Films Prepared by PLD on Their Performance as Toxic Gas Sensors

Abstract

In 2008, the modified European Restriction of Hazardous Substances (RoHS) directive prohibited the use of hazardous substances such as lead, cadmium, and mercury. As such, an urgent need for lead-free components emerged in Europe. In this frame, we have decided to study the microstructure influence of zinc oxide thin films on the detection of hydrogen sulfide (H2S). Zinc oxide thin films were deposited by PLD on silicon substrates under different conditions to modify the microstructure. In order to compare our demonstrators to current commercial semiconductor gas sensors, measurements under H2S were also performed with sensors from Figaro and Winsen corporations. Gas sensors were therefore implemented by using commercial cases in view to test them with Simtronics gas detector DG477. The good sensitivity values measured at T = 400 °C under 100 ppm H2S, and response times as low as 30 s, definitely confirm that ZnO thin films could be developed for commercial sensors.