Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets

Abstract

This article proposes a new power electronic packaging for discrete dies, namely, a standard cell, which consists of a step-etched active metal brazing (AMB) substrate and a flexible printed circuit board (flex-PCB). The standard cell exhibits high thermal conductivity, complete electrical insulation, and low stray inductance, thereby enhancing the performance of SiC mosfet devices. The standard cell has a stray power loop inductance of less than 1,nH and a gate loop inductance of less than 1.5 nH. The standard cell has a flat body with surface-mounting electrical connections on one side and direct thermal connections on the other. The use of flex-PCB die interconnection enables maximum utilization of source pads while providing a flexible gate-source connection and the converter PCB. This article presents the design concept of the standard cell and experimentally validates its effectiveness in a converter system.