Schottky contact of zinc on p-germanium

Abstract

Metal-semiconductor contacts are drawing increasing attention due to their potential for applications in devices and integrated circuits. Experimentally, lower barrier heights have been reported more often for metallic contacts on p-type semiconductors. Here we report our results regarding barrier height of zinc on p-type germanium. The result is discussed in light of the mechanisms which could reduce the pinning effect in such contacts which are normally thought to be responsible for the observation of low barrier heights on p-type semiconductors.