Abstract
The resistive switching effect in ZnxTiyHfzOi nanocomposite film, grown by pulsed laser deposition technique, was investigated. It was shown that ZnxTiyHfzOi film surface had a granular structure with 0.8±0.4 μm2 grain size and 7.3±5.1 nm grain height. Resistive switching from high resistance state (HRS) to low resistance state (LRS) was occurred at 0.9±0.4 V, and from LRS to HRS at 1.5±0.2 V. HRS/LRS ratio was 2.6. The results can be used for nanocomposite-metal-oxide-film RRAM fabrication.
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CITATION STYLE
Tominov, R. V., Zamburg, E. G., Khakhulin, D. A., Klimin, V. S., Smirnov, V. A., Chu, Y. H., & Ageev, O. A. (2017). Investigation of resistive switching of ZnxTiyHfzOi nanocomposite for RRAM elements manufacturing. In Journal of Physics: Conference Series (Vol. 917). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/917/3/032023
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