Comparative analysis of two methods for calculating reflectance of black silicon

  • Akhmedzhanov I
  • Kibalov D
  • Smirnov V
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Abstract

We report a detailed numerical simulation of the reflection of visible light from a sub-wavelength\r grating with a rectangular profile on the silicon surface. Simulation is carried out by the\r effective refractive index method and rigorous coupled-wave analysis. The dependences of the\r reflectance on the grating depth, fill factor and angle of incidence for TE and TM polarisations are\r obtained and analysed. Good agreement between the results obtained by the two methods for grating\r periods of ~100 nm is found. The possibility of reducing the polarised light reflectance to about 1%\r by adjusting the depth and the grating fill factor is demonstrated. The characteristics of the\r Brewster effect manifestation (pseudo-Brewster angle) in the system under study are considered. The\r possibility of the pseudo-Brewster angle existence and its absence for both polarisations of the\r incident light is shown as a function of the parameters of a rectangular nanostructure on the\r surface.

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Akhmedzhanov, I. M., Kibalov, D. S., & Smirnov, V. K. (2015). Comparative analysis of two methods for calculating reflectance of black silicon. Quantum Electronics, 45(4), 385–390. https://doi.org/10.1070/qe2015v045n04abeh015415

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