Electric properties of the interface quantum dot - matrix

Abstract

A theoretical research is presented concerning the potential distribution and electric field intensity in the InAs/GaAs nanoheterosystem with InAs QDs within the framework of self-consistent electron-deformation model. It is shown that at the strained border between a quantum dot and matrix there is a double electric layer, that is n+ - n junction. © R.M.Peleshchak, I.Ya.Bachynsky.