P‐222: Solution‐Processed Red‐Emission Oligofluorene Electrophosphorescent Diodes

Abstract

Efficient red‐emission electrophosphorescent diodes based on a blend of oligofluorene host and phosphorescent dopant are demonstrated in this article. Devices have optimum performances with 1 wt% doping concentration and can be further enhanced by a process of solvent treatment before the deposition of cathode contact. As a result, a peak efficiency of 12 cd A −1 and 6 lm W −1 at 2000 cd m −2 is achieved at a CIE coordinate (0.66, 0.33).