Influence of growth time on crystalline structure, morphologic and optical properties of In 2 O 3 thin films

Abstract

Indium oxide (In 2 O 3 ) thin films are successfully deposited on glass substrate at different deposition timings by ultrasonic spray technique using Indium chloride (InCl 3 ) material source witch is prepared with dissolvent Ethanol (C 2 H 5 -OH), the physical properties of these films are characterized by XRD, MEB,UV-visible. XRD analysis revealed that the films are polycrystalline in nature having centered cubic crystal structure and symmetry space group I2 1 3 with a preferred grain orientation along to (222) plane when the deposition time changes from 4 to 10min but after t = 10min, especially when t = 13min we found that the majority of grains preferred the plane (400). The maximum value of grain size D = 61,51nm is attained for In 2 O 3 films grown at t =10min. the average transmittance is about 72%, The optical gap energy is found to decrease from 3.8 to 3.66 eV with growth time Increased from 4 to 10min but after t = 10min the value of E g will increase to 3.72 eV. A systematic study on the influence of growth time on the properties of In 2 O 3 thin films deposited by ultrasonic spray at 400°C has been reported.