Electronic structure characterization of La2NiMnO6 epitaxial thin films using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy

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Abstract

Electronic structures of La2NiMnO6 epitaxial films are characterized using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy. X-ray absorption spectra reveal that the valence states of Ni2+ and Mn4+ are dominant. The electronic structure at the valence band maximum is mainly derived from the Mn 3d state. The conduction band minimum is composed mostly of the Mn 3d-O 2p hybridized state. The optical gap is estimated to be about 1.5 eV based on the optical conductivity derived from optical spectra. © 2009 American Institute of Physics.

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Kitamura, M., Ohkubo, I., Matsunami, M., Horiba, K., Kumigashira, H., Matsumoto, Y., … Oshima, M. (2009). Electronic structure characterization of La2NiMnO6 epitaxial thin films using synchrotron-radiation photoelectron spectroscopy and optical spectroscopy. Applied Physics Letters, 94(26). https://doi.org/10.1063/1.3159826

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