Comment on “Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering” [Appl. Phys. Lett. 90, 061903 (2007)]

Abstract

In a recent letter, Galtrey et al. investigated the distribution of indium atoms in In/sub x/Ga/sub 1-x/N/GaN quantum wells by atom probe microscopy. The ability to experimentally access chemical and structural information in semiconducting crystals at near atomic resolution in three dimensions is indeed an outstanding achievement. In this paper, Kisielowski et al. comments on the conclusion of the authors that "No evidence for either high indium concentration regions or indium clustering was found in contrast with many of the transmission electron microscopy studies in literature."