Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load

Abstract

The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component. In this paper, a reliability model for SiC power MOSFET in SOT - 227B housing, subjected to power cycling, is presented. Discussion covers preparation of accelerated lifetime test required to develop such reliability model, analysis of semiconductor degradation progress, samples post-failure analysis and identification of reliability model parameters. Such model may be further used for failure prognostics or useful lifetime estimation of high performance power supplies.