Abstract
We have studied the lateral coupling between InAs/GaAs quantum dot pairs embedded in a field-effect structure. Quantum dot pairs and molecules have been identified by the correlated evolution of the Coulomb blockade features of each QD in the pair. This behaviour is largely distorted in the presence of resonant coupling states in the QD molecule. Single QD voltage evolution shows a crossover in the lineshape profile, which is associated to Spectral Diffusion processes due to residual charged environment. © 2010 IOP Publishing Ltd.
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CITATION STYLE
Mũoz-Matutano, G., Canet-Ferrer, J., Alonso-González, P., Alén, B., Fernández-Martínez, I., Martín-Sánchez, J., … González, L. (2010). Emission properties of single InAs/GaAs quantum dot pairs and molecules grown in GaAs nanoholes. In Journal of Physics: Conference Series (Vol. 210). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/210/1/012028
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