The bandgap of ZnSnN2 with a disordered-wurtzite structure

Abstract

The metathesis reaction between SnF4, ZnF2, and NaN3 under high pressure enabled the synthesis of ZnSnN2 crystals with a Zn/(Zn + Sn) ratio of 0.50. The crystal structure, optical bandgap, and carrier density of these stoichiometric ZnSnN2 crystals were investigated. X-ray diffraction profiles of the obtained powders coincided with those of a disordered wurtzite phase, regardless of the synthesis temperature and pressure. The electrical properties of the ZnSnN2 powders with stoichiometric metal compositions were studied after sintering under high pressure and temperature. The disordered wurtzite phase exhibited a bandgap of E g = 0.7-1.2 eV, in reasonable agreement with theoretical predictions.