Mechanism for dislocation density reduction in GaAs crystals by indium addition

Abstract

The strengthening of GaAs single crystals by the substitution of a few percent In on Ga sites is analyzed on the basis of a solid solution hardening model. The hardening entity is an In atom and its four nearest As neighbors. The predicted hardening is substantial and may account for the reduction in dislocation density in as-grown GaAs crystals containing In.