Abstract
The complete analysis of I-V characteristics and set of basic parameters for betavoltaic silicon batteries under Nickel-63 irradiation in the temperature range from 213 to 330 K is carried out using a universal physical TCAD model. The standard TCAD optical generation model was adopted for simulation of electron-hole generation for beta particles irradiation. The pn-junction diode energy converters with real Gaussian doping profiles are considered. The simulated current-voltage characteristics of the 63Ni-Si betavoltaic elements are in good agreement with the measured characteristics.
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CITATION STYLE
Petrosyants, K. O., Pugachev, A. A., Kharitinov, I. A., & Lvov, B. G. (2019). I-V-Characteristics analysis of betavoltaic microbatteries using TCAD model. In Journal of Physics: Conference Series (Vol. 1353). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/1353/1/012093
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