High switching endurance in TaOx memristive devices

Abstract

We demonstrate over 1× 1010 open-loop switching cycles from a simple memristive device stack of Pt/ TaOx /Ta. We compare this system to a similar device stack based on titanium oxides to obtain insight into the solid-state thermodynamic and kinetic factors that influence endurance in metal-oxide memristors. © 2010 American Institute of Physics.