Abstract
This study reports the experimental demonstration of the first waveguide-integrated SiGe modulator using a PIN diode operating in a wide spectral range of the mid-infrared region. At the wavelength of 10μm, an extinction ratio up to 10dB is obtained in injection regime and 3.2dB in depletion regime. High speed operation is obtained, up to 1.5GHz. Furthermore, the device can also operate as an integrated photodetector. Photodetection has thus been characterized from 5.2μm to 10μm wavelengths showing an internal responsivity around 1mA/W, and a 3dB electro-optical bandwidth of 32MHz. These results show a significant advancement in integrated photodetectors and electro-optical modulators for mid-infrared spectroscopy.
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Nguyen, T. H. N., Turpaud, V., Koompai, N., Peltier, J., Calcaterra, S., Isella, G., … Marris-Morini, D. (2024). Integrated PIN modulator and photodetector operating in the mid-infrared range from 5.5 μm to 10 μm. Nanophotonics, 13(10), 1803–1813. https://doi.org/10.1515/nanoph-2023-0692
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