Abstract
Aluminum oxide (Al2O3) film by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surface. In this study, 10 nm Al2O3 film was deposited on crystalline silicon by plasma-assisted atomic layer deposition (PAALD). To optimize concentration of hydrogen in Al2O3 film, deposited RF power was changed from 100 W to 900 W. Then, annealing and firing process were conducted. After annealing and firing, fixed charge in Al2O3 film was calculated by conductance-voltage measurement (C-V) and structure change was analyzed by XPS because the structure is related to fixed charge.
Cite
CITATION STYLE
Shin, K. C., Lee, J. I., Kang, M. G., & Song, H. E. (2017). Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 55–58). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/PVSC.2017.8366692
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