Temperature dependence of capacitance of Si quantum dot floating gate MOS capacitor

Abstract

We report on the temperature dependence of the capacitance of Si-quantum dots (Si-QDs) floating gate MOS capacitor samples both in dark and under laser excitation at low temperatures. The capacitance increases with increase in temperature from 6 to 40 K and saturates at temperature higher than 40 K in dark. The capacitance under laser excitation at each gate voltage is larger than the capacitance in dark, and decreases with increase in temperature at V g = 2 V from 6 to 180 K. This result shows that the carriers in Si-QDs play large roles in the observed temperature dependence of the capacitance. © 2009 IOP Publishing Ltd.