Abstract
This work proposes a new charge pump design that achieves a high set-up ratio for electret earphone driving circuits. The voltage pumping cell is based on Cockcroft-Walton topology to achieve small area with constant MOS capacitor value under low system voltage operation. A 6-V output voltage is regulated by a PFM-based loop. This loop includes a new switched-capacitor divider as a part of the sensing circuitry. All the components are integrated in a standard 0.18μm CMOS. Measurement results show that with 1.2V supply, the output voltage is around 6V with 30mV output ripple. The maximum output driving current is up to 0.7mA.
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CITATION STYLE
Tseng, C. Y., Chen, S. C., Shia, T. K., & Huang, P. C. (2007). An integrated 1.2V-to-6V CMOS charge-pump for electret earphone. In IEEE Symposium on VLSI Circuits, Digest of Technical Papers (pp. 102–103). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/VLSIC.2007.4342678
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