High-resolution transmission electron microscopy and electron energy-loss spectroscopy (EELS) were used to study the microstructural properties of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with various capping layers. Crystallization of CoFeB layers was strongly dependent on the capping materials, and was affected by B diffusion. With NiFe-cap MTJs, CoFeB crystallized from the cap interface and formed a fcc structure; on the other hand, with Ta- and Ti-cap MTJs, CoFeB crystallized from the MgO interface and formed a bcc structure. EELS analysis showed that B mainly diffused to the capping layers and rarely to the MgO layers with increasing temperature. With Ti-cap MTJs, B diffusion caused hcp-Ti crystals to form an amorphous structure and CoFeB crystallized at lower temperature. © 2009 American Institute of Physics.
CITATION STYLE
Miyajima, T., Ibusuki, T., Umehara, S., Sato, M., Eguchi, S., Tsukada, M., & Kataoka, Y. (2009). Transmission electron microscopy study on the crystallization and boron distribution of CoFeB/MgO/CoFeB magnetic tunnel junctions with various capping layers. Applied Physics Letters, 94(12). https://doi.org/10.1063/1.3106624
Mendeley helps you to discover research relevant for your work.