Transmission electron microscopy study on the crystallization and boron distribution of CoFeB/MgO/CoFeB magnetic tunnel junctions with various capping layers

112Citations
Citations of this article
91Readers
Mendeley users who have this article in their library.
Get full text

Abstract

High-resolution transmission electron microscopy and electron energy-loss spectroscopy (EELS) were used to study the microstructural properties of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with various capping layers. Crystallization of CoFeB layers was strongly dependent on the capping materials, and was affected by B diffusion. With NiFe-cap MTJs, CoFeB crystallized from the cap interface and formed a fcc structure; on the other hand, with Ta- and Ti-cap MTJs, CoFeB crystallized from the MgO interface and formed a bcc structure. EELS analysis showed that B mainly diffused to the capping layers and rarely to the MgO layers with increasing temperature. With Ti-cap MTJs, B diffusion caused hcp-Ti crystals to form an amorphous structure and CoFeB crystallized at lower temperature. © 2009 American Institute of Physics.

Cite

CITATION STYLE

APA

Miyajima, T., Ibusuki, T., Umehara, S., Sato, M., Eguchi, S., Tsukada, M., & Kataoka, Y. (2009). Transmission electron microscopy study on the crystallization and boron distribution of CoFeB/MgO/CoFeB magnetic tunnel junctions with various capping layers. Applied Physics Letters, 94(12). https://doi.org/10.1063/1.3106624

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free