A regulated charge pump with extremely low output ripple

Abstract

In this paper, we present a regulated charge pump with extremely low output ripple (<1 mV) that can be used for accurate programming of nonvolatile memory. We present a technique to include a low-drop-out regulator inside the charge-pump regulation loop to reduce the ripple. This charge pump was fabricated in a 0.35 μm standard CMOS process. The die area of this charge pump is 0.163 mm2. While operating from a 2.5 V supply, this charge pump generates regulated voltages up to 10 V.