Tunneling of electrons through semiconductor superlattices

Abstract

The purpose of the present paper is to report a study of tunneling of electrons through semiconductor superlattices (SSL); specially, we have analysed diverse features of transmission coefficient of SSL. The SSL we have considered is Ga0.7Al0.3As-GaAs which has been drawing considerable attention during the recent past on account of some typical features of its band structure. We have indicated how our results would help fabrication of ultra high speed devices.