Abstract
High-quality ZnO epitaxial films have been grown by pulsed-laser deposition on Si (111) substrates using a nanothick high-k oxide Y2O 3 buffer layer. Determined by X-ray diffraction and transmission electron microscopy, the epitaxial relationship between ZnO and Y 2O3 follows (0001)
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CITATION STYLE
APA
Liu, W. R., Li, Y. H., Hsieh, W. F., Hsu, C. H., Lee, W. C., Lee, Y. J., … Kwo, J. (2009). Domain matching epitaxial growth of high-quality ZnO film using a Y 2O3 buffer layer on Si (111). Crystal Growth and Design, 9(1), 239–242. https://doi.org/10.1021/cg8003849
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