Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN

Abstract

Minority carrier properties in dopant-free p-type distributed polarization doped (DPD) AlGaN layers were investigated on the basis of the forward-biased current density-voltage (J-V) characteristics of p-n+ diodes. The fabricated p-DPD AlGaN/n+-AlGaN:Si diodes exhibited ideal electrical characteristics despite the absence of acceptor atoms in the p-type layer. The extracted Shockley-Read-Hall lifetime exceeded 300 ps, which was longer than that reported for p-GaN:Mg on GaN substrates with a similar acceptor concentration (20-50 ps). Moreover, the electron diffusion coefficient was about 20 cm2 s−1 at any temperature, which was convincing in terms of the electron mobility in DPD layers. The results suggest that p-DPD AlGaN has more desirable minority carrier properties than conventional p-GaN:Mg, particularly for bipolar device applications.