Author Correction: Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2−x Memristive Devices (Scientific Reports, (2019), 9, 1, (10013), 10.1038/s41598-019-46192-x)

Abstract

Each I-V curve clearly exhibits hysteresis, indicating RS from LRS to HRS for positive sweeps and HRS to LRS for negative sweeps. The current value gradually decreased through repeated V1 sweeping in which the sweep rate was decreased step by step. The resistance gradually increased (decreased), showing multilevel values as the V1 sweeping process was repeated.” should read: “Each I-V curve clearly exhibits hysteresis, indicating RS from LRS to HRS for positive sweeps and HRS to LRS for negative sweeps. The current value gradually decreased (increased) through repeated V1 sweeping in which the sweep rate was decreased step by step. The resistance gradually increased (decreased), showing multilevel values as the V1 sweeping process was repeated