Abstract
SiC vapor-phase epitaxy on porous silicon carbide (PSC) substrates formed by electrochemical anodization is reported. Raman scattering indicates that the polytype of the optically smooth SiC grown on PSC formed in both p-type and n-type 6H substrates is 6H. The Raman scattering selection rules in these films are the same as those observed in the bulk substrate and epilayers grown on bulk, indicating high crystalline quality. The formation of epitaxial 6H-SiC on porous 6H-SiC may open up new possibilities for dielectric device isolation, fabrication, and epitaxial lift-off. © 2000 American Institute of Physics.
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CITATION STYLE
Spanier, J. E., Dunne, G. T., Rowland, L. B., & Herman, I. P. (2000). Vapor-phase epitaxial growth on porous 6H-SiC analyzed by Raman scattering. Applied Physics Letters, 76(26), 3879–3881. https://doi.org/10.1063/1.126807
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