Abstract
In this work, a Conductive Atomic Force Microscopy (CAFM) working in contact mode has been used to compare the measured electrical properties and breakdown (BD) on ultra thin high-k dielectrics, when different environmental conditions are used. In particular, the effect of the environment on the conductivity measurements, the lateral resolution in current images and the lateral propagation of the BD event will be analyzed in air, dry nitrogen (N2) and Ultra High Vacuum (UHV). © 2010 Elsevier Ltd. All rights reserved.
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CITATION STYLE
Lanza, M., Porti, M., Nafría, M., Aymerich, X., Whittaker, E., & Hamilton, B. (2010). UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements. In Microelectronics Reliability (Vol. 50, pp. 1312–1315). https://doi.org/10.1016/j.microrel.2010.07.049
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