Electrochemical-Etching Approach to Achieving Ultrathin FeSe Films

  • SHIOGAI J
  • NOJIMA T
  • TSUKAZAKI A
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Abstract

Electric double layer transistor (EDLT) has attracted attentions over the decade as a useful tool to induce and control fascinating many physical properties at two dimensional (2D) materials surface based on its giant capacitance. This paper highlights another aspect of EDLT : electrochemical reaction as a method to achieve ultrathin films. Precise tuning of reactivity of electrochemical etching between ionic liquid and solid surface makes it possible to peel off 2D materials layer-by-layer. This technique was applied to an iron-based superconductor FeSe in EDLT towards the observation of high temperature superconductivity in ultra-thin film form.

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SHIOGAI, J., NOJIMA, T., & TSUKAZAKI, A. (2016). Electrochemical-Etching Approach to Achieving Ultrathin FeSe Films. Hyomen Kagaku, 37(11), 541–546. https://doi.org/10.1380/jsssj.37.541

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