Solution-processed naphthalene diimide derivatives as n-type semiconductor materials

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Abstract

Two soluble 1,4,5,8-naphthalenetetracarboxylic diimide (NTCDI) derivatives with phenylmethyl and (trifluoromethyl)benzyl groups (NTCDI-P and NTCDI-F, respectively) were synthesized and used as semiconductor layers in organic thin-film transistors (OTFTs) by a spin-coating process in air. These two synthesized materials were characterized by 1H NMR and UV-vis spectra as well as mass analysis. The morphology and crystallinity of spin-coated NTCDI-P and NTCDI-F films have been inspected using atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. The channel mobilities of these two NTCDI derivatives were calculated to be about 1.2 × 10-3 cm2 V-1 s-1 in air, which degraded slightly while stabilized for NTCDI-F OTFTs after exposure in air for 1 month. © 2008 American Chemical Society.

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Lee, Y. L., Hsu, H. L., Chen, S. Y., & Yew, T. R. (2008). Solution-processed naphthalene diimide derivatives as n-type semiconductor materials. Journal of Physical Chemistry C, 112(5), 1694–1699. https://doi.org/10.1021/jp076278w

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