Photoluminescence characterization in silicon nanowire fabricated by thermal oxidation of nano-scale Si fin structure

Abstract

Low-temperature photoluminescence (PL) spectra of electronhole systems in Si nanowires (NWs) prepared by thermal oxidization of Si fin structures were studied. Mapping of PL reveals that NWs with uniform width are formed over a large area. Annealing temperature dependence of PL peak intensities was maximized at 400 °C for each NW type, which are consistent with previous reports. Our results confirmed that the micro-PL demonstrated here is one of the important methods for characterizations of the interface defects in Si NWs. © 2014 Optical Society of America. © 2014 Optical Society of America.