Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

Abstract

Comparison between pulsed and CW large signal RF performance of field-plated β-Ga2O3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2-μ m gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β-Ga2O3 is a good candidate for future RF applications.