Dynamic process of anti-stokes photoluminescence at a long-range-ordered (formula presented) heterointerface

Abstract

Efficient anti-Stokes photoluminescence (PL) has been observed in (Formula presented) and GaAs single heterostructure. PL of (Formula presented) was observed when photoexciting the (Formula presented) interface. The anti-Stokes PL intensity from the (Formula presented) layer is about 1% of the GaAs PL. The observed anti-Stokes PL exhibits a characteristic intensity dependence in the double-logarithmic plot, which reveals two straight lines having slopes of about 2 and 4. Time-resolved measurements show that the anti-Stokes PL is described by two components: the rapid decay caused by the two-step two-photon absorption of the excitation laser light and the slower decay by energy transfer of electron-hole recombination energy in the GaAs. We found that many-particle effects in the GaAs under high excitations cause the characteristic intensity dependence of the anti-Stokes PL. © 1999 The American Physical Society.