Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots

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Abstract

We report far-infrared absorption in directly doped self-organized InAs quantum dots. Photoluminescence spectra demonstrate a blue shift in peak intensity for increasing doping in the quantum dots. Far-infrared absorption measurements using a Fourier transform infrared spectrometer show absorption in the range of 13-18 μm for quantum dots with Al0.15Ga0.85As and GaAs as the barrier material. © 1997 American Institute of Physics.

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Phillips, J., Kamath, K., Zhou, X., Chervela, N., & Bhattacharya, P. (1997). Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots. Applied Physics Letters, 71(15), 2079–2081. https://doi.org/10.1063/1.119347

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