Influence of lattice parameters on the dielectric constant of tetragonal ZrO 2 and La-doped ZrO 2 crystals in thin films deposited by atomic layer deposition on Ge(001)

13Citations
Citations of this article
31Readers
Mendeley users who have this article in their library.

Abstract

In ZrO 2 crystals, the highest dielectric constant (k) is ascribed to the tetragonal phase. By the use of density functional theory and synchrotron radiation x-ray diffraction, we show how the a and c lattice parameters of the tetragonal phase influence the resulting k. Highest k values are obtained at increasing both a and c, while k is reduced for compressive strained cells. The determination of a and c on La-doped ZrO 2 and ZrO 2 thin films deposited by atomic layer deposition on Ge (001) allowed us to elucidate the influence of La doping and Ge diffusion on the k value. © 2011 American Institute of Physics.

Cite

CITATION STYLE

APA

Wiemer, C., Debernardi, A., Lamperti, A., Molle, A., Salicio, O., Lamagna, L., & Fanciulli, M. (2011). Influence of lattice parameters on the dielectric constant of tetragonal ZrO 2 and La-doped ZrO 2 crystals in thin films deposited by atomic layer deposition on Ge(001). Applied Physics Letters, 99(23). https://doi.org/10.1063/1.3666237

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free