Metal-Organic Framework Thin Films Grown on Functionalized Graphene as Solid-State Ion-Gated FETs

Abstract

The unique properties of 2D-materials like graphene are exploited in various electronic devices. In sensor applications, graphene shows a very high sensitivity, but only a low specificity. This shortcoming can be mastered by using heterostructures, where graphene is combined with materials exhibiting high analyte selectivities. Herein, this study demonstrates the precise deposition of nanoporous metal-organic frameworks (MOFs) on graphene, yielding bilayers with excellent specificity while the sensitivity remains large. The key for the successful layer-by-layer deposition of the MOF films (SURMOFs) is the use of planar polyaromatic anchors. Then, the MOF pores are loaded with ionic liquid (IL). For functioning sensor devices, the IL@MOF films are grown on graphene field-effect transistors (GFETs). Adding a top-gate electrode yields an ion-gated GFET. Analysis of the transistor characteristics reveals a clear Dirac point at low gate voltages, good on-off ratios, and decent charge mobilities and densities in the graphene channel. The GFET-sensor reveals a strong and selective response. Compared to other ion-gated-FET devices, the IL@MOF material is relatively hard, allowing the manufacturing of ultrathin devices. The new MOF-anchoring strategy offers a novel approach generally applicable for the functionalization of 2D-materials, where MOF/2D-material hetero-bilayers carry a huge potential for a wide variety of applications.