Abstract
We have investigated the crystallization of amorphous SiGe films deposited on crystalline GaAs (001) substrates using ns laser pulses. Analysis of the film structure using Raman spectroscopy indicates the formation of heteroepitaxial SixGe1-x/GaAs structures for Si compositions up to x = 25%. Higher compositions lead to polycrystalline films. This is attributed to the increased lattice mismatch between SixGe1-x and GaAs as the Si fraction in the alloy increases.
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CITATION STYLE
Dondeo, F., Santos, P. V., Ramsteiner, M., Comedi, D., Pudenzi, M. A. A., & Chambouleyron, I. (2002). Pulsed laser crystallization of SiGe alloys on GaAs. In Brazilian Journal of Physics (Vol. 32, pp. 376–378). Sociedade Brasileira de Fisica. https://doi.org/10.1590/S0103-97332002000200036
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