Photoluminescence and heterojunction properties of ZnSxSe1-x Epitaxial layers on GaAs and Ge Grown by organometallic CVD

Abstract

Epitaxial layers of ZnSxSe1-x ranging in thickness from 0.1 μm to 4 μm were grown on GaAs and Ge substrates by a low temperature, low pressure organometallic CVD process. The admixture of small amounts of sulfur to ZnSe results in an improved lattice match with the substrate wafers. The exact lattice match occurs at a composition of x = 0.052 for GaAs and x = 0.035 for Ge. The reduction of the stress at the interface leads to improved photoluminescence properties, as expressed in the narrowing of the width of the near-bandgap peak and in a decrease in the intensity of the self-activated luminescence. The performance of n-ZnSe/p-GaAs heterojunctions is also discussed. © 1981 AIME.