High energy excitation transfer from silicon nanocrystals to neodymium ions in silicon-rich oxide film

Abstract

In this work, direct experimental evidence of the excitation energy transfer from silicon quantum dots (Si-QDs) to Nd ions has been given based on photoluminescence (PL) and PL excitation measurements in a wide spectral range. The indirect excitation of Nd ions by transfer from excited Si-QDs is possible and even more efficient at higher energy levels (I49/2 → D43/2, D45/2) than the indirect excitation reported up to now at lower energy (I49/2 → F43/2 - F47/2) levels. © 2010 The Electrochemical Society.