Influence of electron beam exposure on crystallization of phase-change materials

Abstract

Isothermal crystallization of amorphous Sbx Te films capped with ZnS-SiO2 or GeCrN layers was performed using in situ heating within a transmission electron microscope. The effect of the electron beam of the microscope on the crystallization process was investigated. It was found that electron irradiation during the crystallization process leads to a continuous increase in the crystal growth velocity. For Sbx Te sandwiched between ZnS-SiO2 the effect of the electron beam was equivalent to a temperature rise of about 10 K, without affecting the activation energy for growth. However, for Sbx Te sandwiched between GeCrN the activation energy for growth was also decreased due to electron beam exposure. The observed variations in the crystal growth rates are attributed to relaxations within the initial amorphous phase initiated by thermal energy and/or electron irradiation. © 2007 American Institute of Physics.