Thermoelectric properties of S and Te-doped Cu2SnSe3 prepared by combustion synthesis

Abstract

S and Te-doped Cu2SnSe3 samples with chemical formula of Cu2SnSe3-xSx and Cu2SnSe3-xTex (x = 0.05, 0.10, 0.15, 0.20) are prepared, and the effect of S and Te-doping on thermoelectric properties is investigated. In all the samples, the Cu2SnSe3 phase is synthesized as the major product, and its lattice parameters decrease with S-doping but increase with Te-doping. EDS analysis confirms the incorporation of S and Te dopants in the Cu2SnSe3 phase, and reveals an element segregation in the Te-doped samples. S-and Te-doping decreases the electrical conductivity, enhance the Seebeck coefficient, and reduce the thermal conductivity. S-doping is effective to improve the ZT of Cu2SnSe3, and the Cu2SnSe3-xSx sample with x = 0.05 shows a ZT of 0.66 at 773 K, which is improved by more than 50% compared with that of the undoped sample. On the contrary, Te-doping leads to decreased ZT values owing to the significant reduction in electrical conductivity.