A CMOS-Compatible Fabrication Approach for High-Performance Perovskite Photodetector Arrays

Abstract

Lead halide perovskites (LHPs) have attracted significant attention for their exceptional optoelectronic properties, positioning them as prime candidates for next-generation electronics such as photodetectors (PDs), lasers, light-emitting diodes (LEDs), and memristors. However, integrating these materials into device architectures with CMOS-compatible technologies in a simple manner remains a critical challenge. This study introduces a universal method leveraging standard lithographic patterning to fabricate high-performance LHP PDs for red (R), green (G), and blue (B) color detection separately. Through optimization of the device stack and etching conditions, perovskite PDs are pixelated using a one-step lithography and pulsed argon (Ar) milling process. The resulting devices exhibit typical perovskite PD responsivity (0.3 A W−1), low dark current density (less than 10−6 mA cm−2), high detectivity (over 1013 Jones), and short fall time (sub-20 ns without bias). This approach not only enhances device performance but also paves the way for scalable production of perovskite-based optoelectronic devices. The versatility and effectiveness of this method highlight its potential for broad applicability in CMOS-compatible perovskite-based image sensor technology.