Real-time monitoring of the plasma density distribution in low-pressure plasmas using a flat-cutoff array sensor

Abstract

In the industrial semiconductor plasma processing, plasma density and its spatial distribution are critical for the understanding of discharge physics and the enhancement of the processing yield via monitoring of the status of plasma processing. Thus, real-time monitoring of plasma density and uniformity in the wafer region during wafer processing have been receiving significant attention. In this study, we developed an electrode-embedded flat-cutoff array sensor for the real-time measurement of electron density uniformity during wafer processing. We measured the spatial distribution of electron density on the wafer surface, compared it with the results measured in the bulk plasma region, and found different plasma distributions between the two where this difference can be attributed to local electron kinetics. We also performed plasma etching of amorphous carbon materials, which showed a clear correlation with the electron density distribution measured by the flat-cutoff array sensor. This indicates that the electron density distribution on the wafer surface is crucial for the process result. Thus, the array sensor developed in this study can be applied not only to measure plasma uniformity but also to predict the wafer process beforehand, making it highly significant for industrial plasma processing methods, such as virtual metrology.