Abstract
A threshold current of 40μA, nearly 1/4 of the previous lowest record, has been obtained in a GaInAsP-InP microdisk injection laser. This decrease was thought to be mainly due to the reduction of disk diameter and symmetric post-claddings by Cl2/Xe inductively coupled plasma etching.
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CITATION STYLE
APA
Fujita, M., Ushigome, R., & Baba, T. (2000). Continuous wave lasing in GaInAsP microdisk injection laser with threshold current of 40μA. Electronics Letters, 36(9), 790–791. https://doi.org/10.1049/el:20000609
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