Spintronics memory using magnetic tunnel junction for X nm-generation

Abstract

The feasibility of X nm-generation scaling with magnetic tunnel junctions (MTJs) in spintronic memory is aimed at keeping up with state-of-the-art transistor scaling. Magnetocrystalline anisotropy, shape magnetic anisotropy, and multi-interfacial magnetic anisotropy have been proposed to overcome thermal fluctuation even at the X nm-generation. The high magnetocrystalline anisotropy of the L10-ordered alloy combined with graphene as a tunneling barrier in the MTJs was the main concern in this study, and their potential for scaling for both 10 year data retention and nanosecond writing efficiency by micromagnetic simulation is investigated. Data retention of 10 years and high-speed writing of 2.2 ns are simultaneously achieved in the MTJs with a junction diameter of 7 nm.