Nernst Effect of High-Mobility Weyl Electrons in NdAlSi Enhanced by a Fermi Surface Nesting Instability

Abstract

The thermoelectric Nernst effect of solids converts heat flow to beneficial electronic voltages. Here, using a correlated topological semimetal with high carrier mobility μ in the presence of magnetic fluctuations, we demonstrate an enhancement of the Nernst effect close to a magnetic phase transition. A magnetic instability in NdAlSi modifies the carrier relaxation time on "hot spots"in momentum space, causing a strong band filling dependence of μ. We quantitatively derive electronic band parameters from a novel two-band analysis of the Nernst effect Sxy, in good agreement with quantum oscillation measurements and band calculations. While the Nernst response of NdAlSi behaves much like conventional semimetals at high temperatures, an additional contribution ΔSxy from electronic correlations appears just above the magnetic transition. Our work demonstrates the engineering of the relaxation time, or the momentum-dependent self-energy, to generate a large Nernst response independent of a material's carrier density, i.e., for metals, semimetals, and semiconductors with large μ.